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STK40 D100N 4HC140 2SA0794R DM74LS05 05SH4 34063 32024
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  savantic semiconductor product specification silicon npn power transistors 2SD2400 d escription with to-220f package complement to type 2sb1569 high transition frequency collector power dissipation: p c =20w(t c =25  ) applications for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3 a t a =25 2.0 p c collector dissipation t c =25 20 w t j junction temperature 150  t stg storage temperature -55~150  fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2400 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 120 v v (br)cbo collector-base breakdown voltage i c =50a ;i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =50a ;i c =0 5 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.1a 2.0 v v besat base-emitter saturation voltage i c =1a ;i b =0.1a 1.5 v i cbo collector cut-off current v cb =120v; i e =0 1.0 a i ebo emitter cut-off current v eb =4v; i c =0 1.0 a h fe dc current gain i c =0.1a ; v ce =5v 60 320 f t transition frequency i c =0.1a ; v ce =5v;f=30mhz 80 mhz c ob collector output capacitance i e =0; v cb =10v; f=1mhz 20 pf  h fe classifications d e f 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SD2400 package outline fig.2 outline dimensions


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